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Deep Levels In High Resistivity AlGaN Films Grown By MOCVD

Published online by Cambridge University Press:  10 February 2011

A. Y. Polyakov ,
N. B. Smirnov ,
A. V. Govorkov  and
J. M. Redwing
A. V. Govorkov
Affiliation:
Institute of Rare Metals, Moscow 109017, B. Tolmachevsky 5, Russia, kolya@redline.ru
J. M. Redwing
Affiliation:
Epitronix/ATMI, 21002 North 19th Ave., Suite 5, Phoenix, AZ 85027, USA
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Abstract

Deep levels in high resistivity layers of AlGaN grown by MOCVD on sapphire were studied by means of dark current and photocurrent versus temperature measurements and by photoinduced current relaxation spectroscopy (PICTS). Strong temperature quenching of photocurrent was observed and explained by the presence of hole traps with energies 0.2 eV, 0.3 eV and 0.35 eV for films with correspondingly 5%, 15% and 25% of Al. Two hole traps with activation energies of 0.27–0.35 eV and 0.85–1.05 eV depending on composition were detected in PICTS spectra. It is suggested that the former traps are the same as observed in temperature quenching of photocurrent while the latter traps are related to the yellow luminescence band in AlGaN. The photocurrent decay is shown to have a complex form with a rapid decrease followed by a long tail associated with detrapping of holes. It is argued that, at room temperature, the ∼1 eV hole traps are mainly responsible for the amplitude of the tail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 239
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Morkoc, H., Strite, S., Gao, G.B., Lin, M.E., Sverdlov, B. and Bums, M., J. Appl. Phys. 76, 1363 (1994)Google Scholar
2. Gotz, W., Johnson, N.M., Amano, H. and Akasaki, I., Appl. Phys. Lett. 65, 463 (1994)Google Scholar
3. Hacke, P., Nakayama, H., Detchprom, T., Hiramatsu, K. and Sawaki, N., Appl. Phys. Lett. 68, 1362 (1996)Google Scholar
4. Lee, W.I., Huang, T.C., Guo, J.D. and Feng, M.S., Appl. Phys. Lett. 67, 1721 (1995)Google Scholar
5. Gotz, W., Johnson, N.M., Street, R.A., Amano, H. and Akasaki, I., Appl. Phys. Lett. 66, 1340 ( 1995)Google Scholar
6. Look, D.C., Fang, Z.-Q., Kim, W., Aktas, O., Botchkarev, A., Salvador, A. and Morkoc, H., Appl. Phys. Lett. 68, 3775 (1996)Google Scholar
7. Polyakov, A.Y., Govorkov, A.V., Smirnov, N.B., Shin, M., Skowronski, M. and Greve, D.W. in III-V Nitrides, edited by Ponce, F.A., Moustakas, T.D., Akasaki, I. and Monemar, B.A. (Mat. Res. Soc. Proc., 449, Pittsburgh, PA, 1997) pp. 591–596 Google Scholar
8. Sanchez, F.J., Basak, D., Sanchez-Garcia, M.A., Calleja, E., Munoz, E., Izpura, I., Calle, F., Tijero, J.M.G., Beaumont, B., Lorenzini, P., Gibart, P., Cheng, T.S., Foxon, C.T. and Orton, J.W., MIJ-NSR 1, Article 7 (1996)Google Scholar
9. Polyakov, A.Y., Smimov, N.B., Govorkov, A.V. and Redwing, J.M., to be published in Solid- State Electronics, 1998 Google Scholar
10. Balland, J.C., Zielinger, J.P., Noguet, C. and Tapiero, M., J. Phys. D19, 57 ( 1986)Google Scholar
11. Bube, R.H., Photoconductivity of Solids, John Wiley and Sons, New York, London, 1960, chapter 11Google Scholar
12. Polyakov, A.Y., Smimov, N.B., Govorkov, A.V., Usikov, A.S. and Pushnyi, B.V., to be published in Solid-State Electronics, 1998 Google Scholar
13. Akasaki, I. and Amano, H., Basic Optical Properties, Photoluminescence and Cathodoluminescence of GaN and A1GaN, in Properties of Group III Nitrides, edited by Edgar, J.H., INSPEC, London, 1994, pp. 222–230 Google Scholar
14. Lee, H.G., Gershenzon, M. and Goldenberg, B.L., J. Electron. Mater. 20, 621 (1991)Google Scholar
15. Ogino, T. and Aoki, M., Jpn. J. Appl. Phys. 19, 2395 ( 1980)Google Scholar
16. Neugebauer, J. and Van de Walle, C.G., Appl. Phys. Lett. 69, 503 (1996)Google Scholar
17. Polyakov, A.Y., Shin, M., Freitas, J.A., Skowronski, M., Greve, D.W. and Wilson, R.G., J. Appl. Phys. 80, 6349 (1996)Google Scholar
18. Polyakov, A.Y., Smimov, N.B., Govorkov, A.V., Mil'vidskii, M.G., Redwing, J.M., Skowronski, M., Shin, M., Greve, D.W. and Wilson, R.G., to be published in Solid-State Electronics, 1998 Google Scholar
19. Polyakov, A.Y., Smimov, N.B., Govorkov, A.V. and Redwing, J.M., this volumeGoogle Scholar