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Deep Levels in GaN Studied by Extrinsic Photoconductivity Measurement

Published online by Cambridge University Press:  10 February 2011

Rong Zhang ,
Zhenchun Huang ,
Bo Guo ,
J. C. Chen ,
Li Yan ,
Youdou Zheng  and
T. F. Kuech
Rong Zhang
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228 Department of Chemical Engineering & Materials Science Program, University of Wisconsin - Madison, Madison, WI 53706
Zhenchun Huang
Affiliation:
NASA Goddard Space Flight Center, Code 718, Greenbelt, MD 20771
Bo Guo
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228
J. C. Chen
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228
Li Yan
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228
Youdou Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
T. F. Kuech
Affiliation:
Department of Chemical Engineering & Materials Science Program, University of Wisconsin - Madison, Madison, WI 53706
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Abstract

Modulation Extrinsic photoconductivity spectra between 1.44eV and 1.75eV of unintentionally n-doped high resistance GaN film grown by MOCVD are measured at room temperature by using wavelength adjustable Ti:Sapphire laser. We find that there are two major deep levels in the GaN material in the used photon energy range. The relaxation time of excess carriers controlled by those levels are in the order of 10−4sec. The concentration of localized states are determined as 1.8×108cm−3 and 2.5×109cm−3, respectively. A physical model is developed to explain the results and process the data. Using a new method we have determined the optical absorption cross section of deep levels are 1.5×10−17cm2 and 2.7×10−18cm2, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 561
Copyright
Copyright © Materials Research Society 1997

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References

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