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DC to 65 GHz Wide Bandwidth InGaAs Photodiodes and Photoreceivers

Published online by Cambridge University Press:  10 February 2011

Abhay M. Joshi
Abhay M. Joshi*
Affiliation:
Discovery Semiconductors, Inc., Princeton Jct, NJ 08550, Abhay@chipsat.com
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Abstract

We have developed 65 GHz Wide Bandwidth InGaAs Photodiodes and Photoreceivers for optical fiber driven telecommunication applications. The Photodiode operates at a nominal reverse bias of -3V and has a minimum responsivity of 0.5 A/W at 1300 and 1550 nm wavelength. The Ripple Factor is less than ± dB for a wide band of frequencies, DC to 50 GHz. The salient feature of the PIN is an on-chip co-planar waveguide output for proper impedance matching. We have also designed Ultra Wide Bandwidth Amplifiers using InGaAs p-HEMT technology and monolithically integrated them with InGaAs Photodiodes. These Opto-electronic Integrated Circuits (OEICs) which combine optical, microwave, and digital functions on the same chip is a technology that has significant potential for commercial applications such as ethernet fiber local area networks and optical communications systems (Synchronized Optical Network SONET, ISDN, telephony and digital CATV). Important inter-service military applications are optically fed phased array systems and optically controlled microwave networks for airborne and spaceborne systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 115
Copyright
Copyright © Materials Research Society 2000

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