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Damage-Free Photo-Assisted Cryogenic Etching of GaN as Evidenced by Reduction of Yellow Luminescence

Published online by Cambridge University Press:  10 February 2011

J. T. Hsieh ,
J. M. Hwang ,
H. L. Hwang  and
W. H. Hung
J. T. Hsieh
Affiliation:
Institute of Electronic Engineering, National Tsing-Hua University, Hsinchu, 300, Taiwan, R.O.C.
J. M. Hwang
Affiliation:
Institute of Electronic Engineering, National Tsing-Hua University, Hsinchu, 300, Taiwan, R.O.C.
H. L. Hwang
Affiliation:
Institute of Electronic Engineering, National Tsing-Hua University, Hsinchu, 300, Taiwan, R.O.C.
W. H. Hung
Affiliation:
Synchrotron Radiation Research Center, Hsinchu, 300, Taiwan, R.O.C.
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Abstract

Damage-free etching of GaN by Cl2, assisted by an ArF (193 nrm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G10.6
Copyright
Copyright © Materials Research Society 1999

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References

[1] Ping, A. T., Schmitz, A. C., Khan, M. Asif and Adesida, I., J. Electronic Materials 25, 825 (1996).Google Scholar
[2] Pearton, S. J., Vartuli, C. B., Shul, R. J. and Zolper, J. C., Mater. Sci. Eng. B31, 309 (1995).Google Scholar
[3] Cho, H., Vartuli, C. B., Donovan, S. M., Mackenzie, J. D., Abernathy, C. R., Pearton, S. J., Shul, R. J., and Constantine, C., J. Electronic Material 27, 166 (1998).Google Scholar
[4] Shih, M. C., Freiler, M. B., Scarmozzino, R. and Osgood, R. M. Jr, J. Vac. Sci. Technol. B13, 43 (1995).Google Scholar
[5] Leonard, R. T. and Bedair, S. M., Appl. Phys. Lett. 68, 794 (1996).Google Scholar
[6] Lide, D. R., CRC Handbook of Chemistry and Physics (Boca Raton: CRC press, 1992), p. 9–129.Google Scholar
[7] Neugebauer, J. and Walle, C. G. Van De, Appl. Phys. Lett. 69, 503 (1996).Google Scholar
[8] Minsky, M. S., White, M., and Hu, E. L., Appl. Phys. Lett. 68, 1531 (1996).Google Scholar
[9] Youtsey, C., Adesida, I. and Bulman, G., Appl. Phys. Lett. 71, 2151 (1997).Google Scholar
[10] Shul, R. J., McClellan, G. B., Pearton, S. J., Aberbathy, C. R., Constantine, C. and Barratt, C., Electronics Letters, 32, 1408 (1996).Google Scholar
[11] Cho, H., Hong, J., Maeda, T., Donovan, S. M., Abernathy, C. R., Pearton, S. J., Shul, R. J., and Han, J., MRS Internet J. Nitride Semicond. Res. 3, 5 (1998).Google Scholar
[12] Youtsey, C., Romano, L. T. and Adesida, I., Appl. Phys. Lett. 73, 797 (1998).Google Scholar