Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-23T19:37:39.326Z Has data issue: false hasContentIssue false
  • English
  • Français

Damage Accumulation and Annealing in Ion Irradiated Silicon

Published online by Cambridge University Press:  26 February 2011

F. Priolo ,
A. Battaglia ,
C. Spinella  and
E. Rimini
F. Priolo
Affiliation:
Dipartimento di Fisica, 57 Corso Italia, 195129, Catania, Italy
A. Battaglia
Affiliation:
IMETEM-CNR, 57 Corso Italia, 195129, Catania, Italy
C. Spinella
Affiliation:
IMETEM-CNR, 57 Corso Italia, 195129, Catania, Italy
E. Rimini
Affiliation:
Dipartimento di Fisica, 57 Corso Italia, 195129, Catania, Italy
Get access

Abstract

The evolution of pre-existing damage structures in Si under high energy ion irradiation is discussed. Different initial morphologies are investigated: a sample partially pre-damaged with heavy ions and a sample partially pre-damaged with light ions are compared within them and with an undamaged single crystal. It is shown that ion irradiation can produce either damage accumulation, in the form of amorphous regions, or damage annealing depending on the pre-existing damage morphology, on the substrate temperature, and on the doping content in the irradiated layer. These data are discussed and interpreted on the basis of the existing models on ion induced amorphization and crystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 345
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Mayer, J.W., Eriksson, L., Picraux, S.T., and Davies, J.S., Can. J. of Phys. 46, 663 (1968)Google Scholar
2. Chadderton, L.T., Radiat. Eff. 8, 77 (1971)Google Scholar
3. Holland, O.W., Pennycook, S.J., and Albert, G.L., Appl. Phys. Lett. 55, 2503 (1989)Google Scholar
4. Thompson, D.A., Radiat. Eff. 56, 105 (1981)Google Scholar
5. Morehead, F.F. and Crowder, B.L., Radiat. Eff. 6, 27 (1970)Google Scholar
6. Dennis, J.R. and Hale, E.B., J. Appl. Phys. 49, 1119 (1978)Google Scholar
7. Narayan, J., Fathy, D., Oen, O.S. and Holland, O.W., Mater. Lett. 3, 67 (1985)Google Scholar
8. Howe, L.M. and Rainville, M.H., Nucl. Instrum. Meth. 182 /183, 143 (1981)Google Scholar
9. Howe, L.M. and Rainville, M.H., Nucl. Instrum. Meth. B19 /20, 61 (1987)Google Scholar
10. Howe, L.M. and Rainville, M.H., Mater. Res. Soc. Symp. Proc. 93, 79 (1987)Google Scholar
11. Holland, O.W., El-Ghor, M.K. and White, C.W., Mater. Res. Soc. Symp. Proc. 147, 169 (1989)Google Scholar
12. Williams, J.S., Elliman, R.G., Brown, W.L., and Seidel, T.E., Phys. Rev. Lett. 55, 1482 (1985)Google Scholar
13. Linnros, J., Elliman, R.G. and Brown, W.L., J. Mater. Res. 3, (1988)Google Scholar
14. Priolo, F., Spinella, C., and Rimini, E., Phys. Rev. B41, 5235 (1990)Google Scholar
15. Jackson, K.A., J. Mater. Res. 3, 1218 (1988)Google Scholar
16. Atwater, H.A., and Brown, W.L., Appl. Phys. Lett. 56, 30 (1990)Google Scholar
17. Holland, O.W., Appl. Phys. Lett. 54, 320 (1990)Google Scholar
18. Battaglia, A., Priolo, F., Rimini, E. and Ferla, G., Appl. Phys. Lett. 56, 2622 (1990)Google Scholar
19. Battaglia, A., Priolo, F. and Rimini, E., Proc. of the Int. Conf. on Ion Beam Modification of Materials 1990 (to be published)Google Scholar
20. Biersack, J.P. and Haggmark, L.G., Nucl. Instrum. Meth. 174, (1980)Google Scholar
21. Priolo, F., Battaglia, A., Nicotra, R. and Rimini, E., Appl. Phys. Lett. 57, 768 (1990)Google Scholar
22. Spinella, C., Lombardo, S. and Campisano, S.U., Appl. Phys. Lett. 55, 109 (1989)Google Scholar