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Cw Laser-Recrystallized Polysilicon as A Device-Worthy Material
Published online by Cambridge University Press: 15 February 2011
Abstract
The basic crystallographic and electronic properties of cw laser recrystallized thin polysilicon films are presented and shown to be suitable for fabrication of MOSFET devices. Devices and simple integrated circuits fabricated to explore the potential of this material have electrical characteristics similar to devices fabricated on single crystal material and offer significant promise for future applications.
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- Copyright © Materials Research Society 1981
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