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Current Status of SiC Power Switching Devices: Diodes & GTOs

Published online by Cambridge University Press:  10 February 2011

S. Seshadri ,
A. K. Agarwall ,
W. B. Hall ,
S. S. Mani ,
M. F. MacMillan ,
R. Rodrigues ,
T. Hanson ,
S. Khatri  and
P. A. Sanger
S. Seshadri
Affiliation:
ESSS, STC Northrop Grumman Corporation, 1350 Beulah Road, Pittsburgh, PA 15235–5098, sseshadr@ aeslcad.essd.pa.northgrum.com
A. K. Agarwall
Affiliation:
Currently at Cree Research, Inc. 4600 Silicon Drive, Durham, NC 27703
W. B. Hall
Affiliation:
Northrop Grumman Corporation, Baltimore, MD
S. S. Mani
Affiliation:
Currently at Sandia National Laboratory, Albuquerque, NM
M. F. MacMillan
Affiliation:
ESSS, STC Northrop Grumman Corporation, 1350 Beulah Road, Pittsburgh, PA 15235–5098, sseshadr@ aeslcad.essd.pa.northgrum.com
R. Rodrigues
Affiliation:
Silicon Power Corporation, Malvern, PA
T. Hanson
Affiliation:
Silicon Power Corporation, Malvern, PA
S. Khatri
Affiliation:
Silicon Power Corporation, Malvern, PA
P. A. Sanger
Affiliation:
ESSS, STC Northrop Grumman Corporation, 1350 Beulah Road, Pittsburgh, PA 15235–5098, sseshadr@ aeslcad.essd.pa.northgrum.com
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Abstract

The progress that has been made in SiC diodes and GTOs is reviewed. A 100 A/1000 V SiC pi- n diode package, the highest current rating reported for any SiC device, a 69 A conduction/ 11 A turn-off of a SiC GTO and MTOTM, as well as the first all-SiC, 3 phase Pulse Width Modulated (PWM) inverter are reported, herein, for the first time. The inverter achieves voltage controlled turn off with a high temperature capable, hybrid SiC JFET. Material and process technology issues that will need to be addressed before device commercialization can be realized are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 23
Copyright
Copyright © Materials Research Society 1999

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References

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