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The Crystallographic Theory of Dislocations in Interfaces

Published online by Cambridge University Press:  26 February 2011

R.C. Pond
R.C. Pond*
Affiliation:
Department of Materials Science and Engineering.The University of Liverpool, P.O. Box 147, Liverpool L69 3BX, U.K.
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Abstract

The crystallographic theory of interfacial dislocations is outlined, and shown to encompass the case of defects in single crystals. It is demonstrated that four distinctive types of dislocations can arise in interfaces. Defects in two of these categories arise ubiquitously and have been studied extensively in the past, but defects in the remaining categories have only been observed relatively recently. The significance of these latter defects is assessed by discussing the type of interfaces in which they can occur, and their possible contribution to static and dynamic interfacial properties. Specific examples of their roles in accommodating misfit in epitaxial interfaces, and shuffle-less twinning in hcp metals are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 122: Symposium I – Interfacial Structure, Properties, and Design , 1988 , 49
Copyright
Copyright © Materials Research Society 1988

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References

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