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Crystal Surface Stoichiometry and the Fermi Level Effects on Outdiffusion of Si in GaAs

Published online by Cambridge University Press:  22 February 2011

Horng-Ming You ,
Ulrich M. GöSele  and
Teh Yu Tan
Horng-Ming You
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708–0300
Ulrich M. GöSele
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708–0300
Teh Yu Tan
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708–0300
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Abstract

GaAs samples doped with Si to a concentration of ∼2.7×10 18cm−3 were annealed at temperatures between 800 and 1000°C for 3 to 20 hours under As-rich and As-poor conditions for Si outdiffusion which were then measured using the capacitance-voltage method employing an electrochemical profiler. The deduced Si diffusivity showed strong dependencies on the As4 vapor phase pressure, PAs4 and on the electron concentration, n. When reduced to that under intrinsic conditions, activation enthalpies of 3.91 eV and 4.19 eV were obtained for As-rich and As-poor annealing cases, respectively. From these results, it is concluded that Si outdiffusion in GaAs is governed by the triply-negatively-charged Ga vacancies, .

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 151
Copyright
Copyright © Materials Research Society 1993

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References

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