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Crystal Growth of Laser Annealed Polycrystalline Silicon as a Function of Hydrogen Content of Precursors

Published online by Cambridge University Press:  14 March 2011

Takuo Tamura ,
Kiyoshi Ogata ,
Michiko Takahashi ,
Kenkichi Suzuki ,
Hironaru Yamaguchi  and
Satoru Todoroki
Takuo Tamura
Affiliation:
Production Engineering Research Laboratory, Hitachi Ltd. 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
Kiyoshi Ogata
Affiliation:
Production Engineering Research Laboratory, Hitachi Ltd. 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
Michiko Takahashi
Affiliation:
Image-related Device Development Center, Displays, Hitachi Ltd. 3300 Hayano, Mobara, Chiba 297-8622, Japan
Kenkichi Suzuki
Affiliation:
Image-related Device Development Center, Displays, Hitachi Ltd. 3300 Hayano, Mobara, Chiba 297-8622, Japan
Hironaru Yamaguchi
Affiliation:
Production Engineering Research Laboratory, Hitachi Ltd. 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
Satoru Todoroki
Affiliation:
Production Engineering Research Laboratory, Hitachi Ltd. 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Abstract

The influence of hydrogen in a precursor on excimer laser crystallization behavior was investigated. The crystal orientation and lattice constant of polycrystalline silicon films were analyzed by X-ray diffraction measurement. An intensity ratio of 111 to 220 was used as an index of the (111) preferred orientation. A randomly oriented film with an index of 2 at lower energy density changed to the highly (111) oriented phase with an index of more than 15 at higher energy density. It was observed in the PE-CVD films that increasing the hydrogen in the precursor films decreased the orientation index. The lattice constant of the laser-annealed PE-CVD silicon was found to be larger than that of the PVD silicon and to decrease with an increase in laser energy density. The network structure of as-deposited PVD film with less hydrogen content was denser than that of as-deposited PE-CVD. The network structure of the precursor strongly affected the crystal growth, and the structure of the ELC poly-Si was still affected by the precursors, even though the hydrogen content decreased after laser annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q9.5.1
Copyright
Copyright © Materials Research Society 2000

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References

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