Article contents
Cross-Sectional Transmission Electron Microscopy of Si-Based Nanostructures
Published online by Cambridge University Press: 10 February 2011
Abstract
This work demonstrates the successful application of the precision cross-sectioning technique to the characterization of two types of Si-based nanostructures. Careful wedge-polishing of an array of metal-coated poly-Si microlines gave electron transparency over areas as broad as 1.5 mm across. A single, specific, SET (Single Electron Transistor), having dimensions of 4 × 4 μm2, was cross-sectioned for examination using conventional and high-resolution TEM imaging.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1997
References
- 2
- Cited by