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Critical Thickness of GaAs/InGaAs and AlGaAs/GaAsP Quantum Wells Grown by Atmospheric Pressure OMCVD

Published online by Cambridge University Press:  28 February 2011

Daniel C. Bertolet ,
Jung-Kuei Hsu ,
Kei May Lau  and
Emil S. Koteles
Daniel C. Bertolet
Affiliation:
University of Massachusetts, Dept. of Electrical & Computer Engr., Amherst, MA 01003
Jung-Kuei Hsu
Affiliation:
University of Massachusetts, Dept. of Electrical & Computer Engr., Amherst, MA 01003
Kei May Lau
Affiliation:
University of Massachusetts, Dept. of Electrical & Computer Engr., Amherst, MA 01003
Emil S. Koteles
Affiliation:
GTE Laboratories, Inc. 40 Sylvan Rd., Waltham, MA 02254
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Abstract

A critical layer thickness study of strained GaAs/InGaAs and AlGaAs/GaAsP quantum wells (QWs) grown by atmospheric pressure organometallic chemical vapor deposition (OMCVD) is reported. Characterization by conventional photoluminescence (PL), photoluminescence excitation (PLE) spectroscopy, optical microscopy, and x-ray diffraction suggests that partial or regional relaxation begins to occur at critical thicknesses predicted by the force-balance model. To test the stability of strained quantum wells with well width near or exceeding the predicted critical thickness, annealing up to 850°C for ten minutes was carried out. No sign of degradation or complete relaxation of the QW layers was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 141
Copyright
Copyright © Materials Research Society 1990

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