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Cosio2 Formation on Strained GexSi1−x Layers BY Co/GexSi1−x Thermal Reaction

Published online by Cambridge University Press:  21 February 2011

M.M. Ridgway ,
R.R. Elliman ,
R. Pascual ,
J.J. Whitton  and
J.-M. Baribeau
M.M. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
R.R. Elliman
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
R. Pascual
Affiliation:
Departaent of Materials and Metallurgical Engineering, Queen's University, Kingston, Canada
J.J. Whitton
Affiliation:
Department of Physics, Queen's University, Kingston, Canada
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada
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Abstract

The formation of CoSi2 on Ge.17Si.83 layers by Co/Ge.17Si.83 thermal reaction nas been studied with a variety of analytical techniques. Co films deposited on strained Ge.17Si.83 layers were annealed at 600°C for 0–240 min. Following 240 rain annealing, the reacted surface layer was composed of CoSi, CoSi2 and GexSi1-x precipitates (the latter probably rich in Ge) as identified with transmission electron microscopy, x-ray diffraction and/or Raman spectroscopy. Lateral phase non-uniformity was evident with both transmission and scanning electron microscopy. For samples annealed with and without an evaporated Co film, enhanced relaxation of the underlying Ge.17Si.83 layer was apparent in the former.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 155
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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