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Correlations of Ba1−xSrxTiO3 Materials and Dielectric Properties

Published online by Cambridge University Press:  15 February 2011

Robert Tsu
Affiliation:
Materials Science Laboratory, Corporate R&D, Texas Instruments
Hung-Yu Liu
Affiliation:
Materials Science Laboratory, Corporate R&D, Texas Instruments
Wei-Yung Hsu
Affiliation:
Semiconductor Process and Device Center, Corporate R&D, Texas Instruments
Scott Summerfelt
Affiliation:
Materials Science Laboratory, Corporate R&D, Texas Instruments
Katsuhiro Aoki
Affiliation:
ULSI Technology Development, Texas Instruments, Japan
Bruce Gnade
Affiliation:
Materials Science Laboratory, Corporate R&D, Texas Instruments
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Abstract

Thin film barium strontium titanate, Ba1−xSrxTiO3 (BST), has been deposited on Pt bottom electrodes using metal-organic decomposition (MOD). Optimization of BST electric properties, including capacitance density and leakage current, can be achieved by altering the chemical and microstructural attribute of the films. Dielectric properties of BST are strongly dependent on processing temperature, film thickness, composition, and microstructure, which are closely correlated with each other. Nucleation temperatures of BST range from 580°C – 650°C depending on film thicknesses. The chemical composition giving the highest dielectric constant is explained in terms of microstructure; capacitance increases with increasing grain size for the BST films in this study. Capacitance density of 50 fF/μ m2 and leakage current density < 100 nA/cm2 at 1.6 V can be achieved by optimizing BST materials properties. In addition, leakage conduction through the Pt/BST/Pt capacitor is shown to consist of polarization current resulting from Debye relaxation and true leakage current attributed to Schottky electron emission.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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