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Correlation of Void Formation with the Reduction of Carrier Activation and Anomalous Dopant Diffusion in Si-Implanted GaAs

Published online by Cambridge University Press:  25 February 2011

Kei-Yu Ko ,
Samuel Chen ,
S. -Tong Lee ,
Longru Zheng  and
T.Y. Tan
Kei-Yu Ko
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650
Samuel Chen
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650
S. -Tong Lee
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650
Longru Zheng
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650
T.Y. Tan
Affiliation:
Dept. of Mechanical Eng. and Materials Sci., Duke Univ., Durham, NC 22706, and Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
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Abstract

We report the study of high-dose Si-implanted GaAs containing doses ranging from 1×1014 to 1×1015 cm-2 and with subsequent anneals at 850°C for 1 hour. At doses ≥ 3×1014 cm-2, a severe reduction of carrier concentration and anomalous Si diffusion are observed in the near-surface region. In the same region, small, near-spherical voids are found by transmission electron microscopy. In contrast, for samples implanted with doses ≤ 1×1014 cm-2, voids are not found, and both normal carrier activation and Si diffusion profiles are observed. The concurrent onset of these three phenomena in the same region in high-dose samples leads us to conclude that the severe reduction of carrier concentration and anomalous Si diffusion are attributable to the formation of voids.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 983
Copyright
Copyright © Materials Research Society 1990

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