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Correlation Between Electrical Properties and Residual Defects in Se+-Implanted InP After Rapid Thermal Annealing

Published online by Cambridge University Press:  22 February 2011

P. MÜller ,
T. Bachmann ,
E. Wendler ,
W. Wesch  and
U. Richter
P. MÜller
Affiliation:
Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, D – 07743 Jena, Germay
T. Bachmann
Affiliation:
Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, D – 07743 Jena, Germay
E. Wendler
Affiliation:
Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, D – 07743 Jena, Germay
W. Wesch
Affiliation:
Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, D – 07743 Jena, Germay
U. Richter
Affiliation:
Labour für Mikrodiagnostik, Weinbergweg 2, D - 06120 Halle, Germany
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Abstract

>100> -semiinsulating InP was implanted with 600 keV Se-ions at temperatures between 300K and 425K with an ion dose of 1 ×1014 cm−2. After capping the samples with about 120 nm siliconoxynitride annealing was performed at 700°C up to 975°C using a graphite strip heater system. The annealed samples were analyzed with Rutherford backscattering, electron microscopy and conventional Hall measurements. The results show, that a strong correlation exists between defects remaining after annealing (for instance dislocations, loops, microtwins) and the measured electrical properties. An implantation temperature ≦ 395K and annealing at least at 800°C for 50 s is necessary to obtain high performance electrically active layers. The activation of selenium in InP can be well described using a simple thermodynamical model. The model yields an activation energy of EA = (1.0 ± 0. 1) eV which can be understood as the energy necessary to split-up selenium-vacancy-complexes and a diffusion energy of Ed = (2.0 ± 0.2) eV representing material transport of the semiconductor material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 119
Copyright
Copyright © Materials Research Society 1994

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