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Correlation Between Defect Density and Process Variables In Step-Graded, Relaxed Si0.7Ge0.3 Grown on Si by Rtcvd

Published online by Cambridge University Press:  21 February 2011

G. Patrick Watson ,
Eugene A. Fitzgerald ,
Bahram Jalali ,
Ya-Hong Xie ,
Bonnie Weir  and
Leonard C. Feldman
G. Patrick Watson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Eugene A. Fitzgerald
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Bahram Jalali
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Ya-Hong Xie
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Bonnie Weir
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Leonard C. Feldman
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

The effect of the average grading rate and of the number of incremental Ge alloy steps on the threading dislocation density has been studied in 30% Ge relaxed films formed by rapid thermal chemical vapor deposition (RTCVD) on Si substrates. Electron beam induced current (EBIC) images and transmission electron microscopy (TEM) show that threading defects fall in two categories: individual threading dislocations (dark spot defects), and organized clusters of these threads (pile-ups, or dark line defects). The overall surface defect density must include both categories to properly characterize the material. The lowest defect density, 4 × 105cm−2, was found in specimens grown at an average grading rate of 10% Ge per pm thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 15
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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2. LeGoues, F. K., Meyerson, B. S., and Morar, J. F., Phys. Rev. Lett., 66 (1991), 2903.CrossRefGoogle Scholar