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Copper Oxide Edge-Termination for GaN Schottky Barrier Diodes with Low Turn-on Voltage

Published online by Cambridge University Press:  16 January 2012

Yuichi Minoura ,
Naoya Okamoto ,
Masahito Kanamura ,
Tadahiro Imada ,
Toshihiro Ohki ,
Kenji Imanishi ,
Keiji Watanabe ,
Kazukiyo Joshin  and
Toshihide Kikkawa
Yuichi Minoura
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Naoya Okamoto
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Masahito Kanamura
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Tadahiro Imada
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Toshihiro Ohki
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Kenji Imanishi
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Keiji Watanabe
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Kazukiyo Joshin
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
Toshihide Kikkawa
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan
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Abstract

In this study, we propose copper oxide (CuOx) edge-termination for GaN-based Schottky barrier diodes (SBDs) with low turn-on voltage. CuOx fabricated by thermal oxidization of sputtered Cu film at 275°C consisted mainly of Cu2O which is known as a p-type semiconductor. We applied CuOx edge-termination to GaN SBDs with tantalum (Ta) Schottky electrode which has low work function of 4.25 eV. The experimental results of current-voltage characteristics insisted that CuOx edge-termination structure was effective to increase breakdown voltage of GaN SBDs with keeping low turn-on voltage of 0.29 V at 10 A/cm2.

Keywords

III-Vdevicescompound
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o04-05
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Kikkawa, T., Makiyama, K., Ohki, T., Kanamura, M., Imanishi, K., Hara, N., and Joshin, K., Phys. Status. Solidi, 206, 1135 (2009).Google Scholar
2. Ozbek, A. M. and Baliga, B. J., IEEE Electron Device Lett. 32, 300 (2011).Google Scholar
3. Saitoh, Y., Sumiyoshi, K., Okada, M., Horii, T., Miyazaki, T., Shiomi, H., Ueno, M., Katayama, K., Kiyama, M. and Nakamura, T., Appl. Phys. Express. 3, 081001 (2010).Google Scholar
4. Zhang, A. P., Johnson, J. W., Luo, B., Ren, F., Pearton, S. J., Park, S. S., Park, Y. J. and Chyi, J. I., Appl Phys.Lett. 79, 1555 (2001).Google Scholar
5. Nikitine, S., Grun, J. B. and Sieskind, M, J. Phys. Chem. Solids, 17, 292 (1961).Google Scholar
6. Tanaka, H., Shimakawa, T., Miyata, T., Sato, H. and Minami, T., Appl. Surf. Sci. 244, 568 (2005).Google Scholar
7. Han, J. W. and Meyyappan, M., Appl. Phys. Lett. 98, 192102 (2011).Google Scholar
8. Ishizuka, S., Kato, S., Maruyama, T. and Akimoto, K., Jpn. J. Appl. Phys. 41, 5060 (2002).Google Scholar
9. Maruyama, T., Jpn. J. Appl. Phys. 37, 4099 (1998).Google Scholar
10. Matsumura, H., Fujii, A. and Kitatani, T., Jpn. J. Appl. Phys. 35, 5631 (1996).Google Scholar
11. Ding, P. J., Lanford, W.A., Hymes, S. and Murarka, S. P., J. Appl. Phys. 75, 3627 (1993).Google Scholar