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Cooling Mechanism and Structural Change of Local Regions With a Different Cooling Rate of Excimer Laser Annealed Si

Published online by Cambridge University Press:  26 February 2011

Byoung-Min Lee
Affiliation:
bmlee@kut.ac.kr, Korea University of Technology and Education, Department of Materials Engineering, Gajeonri 307 Byeong cheon-myeon, Chung an City, 330-708, Korea, Republic of
Baek Seok Seong
Affiliation:
bsseong@kaeri.re.kr, Korea Atomic Energy Research Institute, Neutron Physics Department, P. O. B. 105, Yuseong,, Daejeon, 305-353, Korea, Republic of
Hak Rho Kim
Affiliation:
hrkim@kaeri.re.kr, Korea Atomic Energy Research Institute, Neutron Physics Department, P. O. B. 105, Yuseong,, Daejeon, 305-353, Korea, Republic of
Shinji Munetoh
Affiliation:
munetoh@zaiko.kyushu-u.ac.jp, Kyushu University, Department of Materials Science and Engineering, 744 Motooka,, Fukuoka, 819-0395, Japan
Teruaki Motooka
Affiliation:
motooka@zaiko.kyushu-u.ac.jp, Kyushu University, Department of Materials Science and Engineering, 744 Motooka,, Fukuoka, 819-0395, Japan
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Abstract

To investigate the cooling mechanism and the local structural changes of excimer laser-annealed silicon (Si), molecular dynamics (MD) simulations were performed. Heat flow of molten Si showed a strong dependency of the local region during a natural cooling. An amorphous-to-liquid transition near an interface in the temperature range of 1600 K ∼ 1800 K was expected with the results of the local diffusion coefficients calculated by integrating the velocity autocorrelation functions. It was confirmed that the structure of the interface region affected the cooling rate of the overall system. The structural properties at the various local regions after a cooling were assessed in terms of the configurational properties including the coordination and bond-angle distributions. A spontaneous nucleation of Si near a interface was observed during a natural cooling.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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