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Control of the Surface Reactivity of the Si(100) Surface

Published online by Cambridge University Press:  28 February 2011

John T. Yates Jr. ,
M. J. Bozack ,
L. Muehlhoff  and
W. J. Choyke
John T. Yates Jr.
Affiliation:
Surface Science Center, Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
M. J. Bozack
Affiliation:
Surface Science Center, Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
L. Muehlhoff
Affiliation:
Surface Science Center, Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
W. J. Choyke
Affiliation:
Department of Physics, University of Pittsburgh and Westinghouse Research and Development Center, Pittsburgh, Pennsylvania 15235
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Abstract

We have used molecular beam methods and temperature programmed desorption to probe the reaction of several hydrocarbons with the Si(100) surface at cryogenic temperatures. It has been found that the kinetics of the surface reaction with the C=C bond can be strongly influenced by the production of active surface sites using prebombardment with Ar ions. The chemistry of the adsorbate is also influenced by electron bombardment of the adsorbed layer. Conversely, capping of active sites with atomic hydrogen retards the kinetics of the surface reaction. This work forms a first step in using the methods of surface kinetics and spectroscopy to probe the details of the elementary steps at work in chemical vapor deposition and plasma vapor deposition, leading to the production of SiC films.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 539
Copyright
Copyright © Materials Research Society 1987

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