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Control of Solid-Excitation-Based Photochemical Dry Etching of Semiconductors by Ion-Bombardment-Induced Damage

Published online by Cambridge University Press:  26 February 2011

C.I.H. Ashby  and
D. R. Myers
C.I.H. Ashby
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185
D. R. Myers
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185
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Abstract

Carrier-driven photochemcial dry etching of semiconductors can be selectively suppressed by ion-implantation-induced defects. The magnitude of this suppression depends on the semiconductor impurity doping concentration, the ion fluence, and the photo-excitation wavelength.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 429
Copyright
Copyright © Materials Research Society 1998

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References

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