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Control of Solid-Excitation-Based Photochemical Dry Etching of Semiconductors by Ion-Bombardment-Induced Damage
Published online by Cambridge University Press: 26 February 2011
Abstract
Carrier-driven photochemcial dry etching of semiconductors can be selectively suppressed by ion-implantation-induced defects. The magnitude of this suppression depends on the semiconductor impurity doping concentration, the ion fluence, and the photo-excitation wavelength.
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- Copyright © Materials Research Society 1998
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