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Control of Iron Disilicide Crystal Structure by Using Liquid Phase Obtained by Au-Si Eutectic Reaction

Published online by Cambridge University Press:  04 February 2015

Kensuke Akiyama ,
Yuu Motoizumi  and
Hiroshi Funakubo
Kensuke Akiyama
Affiliation:
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan.
Yuu Motoizumi
Affiliation:
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan.
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Abstract

The Au-Si liquid phase was obtained by melting the Si surface via Au-Si eutectic reaction, which contributed to the formation of semiconducting iron disilicide (β-FeSi2), on Au-coated Si(100) substrates. By coating a substrate with an Au layer of 60 nm or more, the Au-Si liquid phase covered the entire Si substrate surface, and single-phase β-FeSi2 was grown on Si(100) substrates. A clear photoluminescence spectrum of β-FeSi2 indicated the formation of high-quality crystals with a low density of the non-radiative recombination center in the grains.

Keywords

compoundluminescencephysical vapor deposition (PVD)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1760: Symposium YY – Advanced Structural and Functional Intermetallic-Based Alloys , 2015 , mrsf14-1760-yy05-03
Copyright
Copyright © Materials Research Society 2015 

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References

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