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Control of indium surface segregation in GaAs layer on InGaP grown by MOVPE

Published online by Cambridge University Press:  11 February 2011

Y. Fukushima ,
Y. Nakano  and
Y. Shimogaki
Y. Fukushima
Affiliation:
School of Engineering, University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113–8656, Japan
Y. Nakano
Affiliation:
School of Engineering, University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113–8656, Japan CREST (Core Research for Evolutional Science and Technology), JST (Japan Science and Technology Corporation)
Y. Shimogaki
Affiliation:
School of Engineering, University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113–8656, Japan CREST (Core Research for Evolutional Science and Technology), JST (Japan Science and Technology Corporation)
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Abstract

In order to fabricate good hetero-interface of GaAs/InGaP system by metal-organic vapor phase epitaxy (MOVPE), we studied the indium atom distribution by X-ray photoelectron spectroscopy (XPS). The systematic XPS depth profile analyses of InGaP/GaAs revealed that InGaP surface contains an excess amount of indium atoms. The excess indium atoms diffuse into GaAs layer and cause surface segregation. We have developed a novel gas switching sequence to switch the growth from InGaP to GaAs. That is, after the growth of InGaP, trimethylgallium (TMGa) was pre-introduced to the reactor to terminate the excess amount of indium atoms on InGaP layer. Then tertiarybutylarsine (TBAs) was allowed to flow on the InGaP surface to initiate GaAs growth. This new sequence reduced the amount of indium atoms at the interface and contributed to suppress the inter-diffusion and surface segregation of indium atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M1.3
Copyright
Copyright © Materials Research Society 2003

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