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Contact Issues of GaN Technology

Published online by Cambridge University Press:  10 February 2011

D. Qiao ,
L.S. Yu ,
S. S. Lau ,
G. J. Sullivan ,
S. Ruvimov  and
Z. Liliental-Weber
D. Qiao
Affiliation:
Department of Electrical and Computer Engineering University of California, San Diego San Diego, CA 92093, lau@ece.ucsd.edu
L.S. Yu
Affiliation:
Department of Electrical and Computer Engineering University of California, San Diego San Diego, CA 92093, lau@ece.ucsd.edu
S. S. Lau
Affiliation:
Department of Electrical and Computer Engineering University of California, San Diego San Diego, CA 92093, lau@ece.ucsd.edu
G. J. Sullivan
Affiliation:
Rockwell Science Center Thousand Oaks, CA 91360
S. Ruvimov
Affiliation:
Lawrence Berkeley National Laboratory Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory Berkeley, CA 94720
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Abstract

In this paper, we discuss the issue of fabricating reliable and reproducible ohmic contacts on AlGaN HFET structures. During the course of our investigation of fabricating contacts to HFETs, we found that the contact properties could vary significantly from one sample to another, even though they were nominally the same. This problem was prominently manifested in the ohmic contact behavior. The origin of this problem was traced back to the variation of the HFET structure during growth. In this paper, we report an attempt to fabricate reproducible ohmic contacts of these structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G1.5
Copyright
Copyright © Materials Research Society 1999

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References

[1]. Yu, L.S., Qiao, D. J., Xing, Q. J., Lau, S.S., Boutro, K.S. and Redwing, J.M., Appl. Phys. Lett. 73, 238 (1998).Google Scholar
[2]. Chen, C.H., Baier, S.M., Arch, D.K. and Shur, M.S., IEEE Tran. Electron Device, 35, 571 (1988).Google Scholar
[3]. Yu, E.T., Dang, X.Z., Yu, L.S., Asbeck, P.M., Lau, S.S., Boutros, K.S. and Redwing, J.M., Appl. Phys. Lett. 73, (1998).Google Scholar
[4]. Zopler, J.C., Rieger, D.J., Baca, A.G., Pearton, S.J., Lee, J.W., Stall, R.A., Appl.Phys. Lett. 69, 538 (1996).Google Scholar
[5]. Cao, X.A., Ren, F., Pearton, S.J., Zeitouny, A., Eizenberg, M., Zolper, J.C., Aberbathy, C.R., Han, J., Shul, R.J. and Lothian, J.R., Appl.Phys. Lett., 73, 229 (1998).Google Scholar
[6]. Burm, Jinwook, Chu, Kenneth, Davis, William A., Schaff, William J., Eastman, Lester F., Eustis, Tyler J., Appl.Phys. Lett., 70, 464 (1997).Google Scholar
[7]. Zolper, J.C., Han, J., Biefeld, R.M., Deusen, S.B. Van, Wampler, W.R., Reiger, D.J., Pearton, S.J., Williams, J.S., Tan, H.H., and Stall, R., J. Electron. Mater., 27, 179 (1998).Google Scholar
[8]. Kobayashi, H. and Gibson, W.M., Appl. Phys. Lett., 73, 1406, 1998.Google Scholar
[9]. Ruvimov, S., Liliental-Weber, Z., Washburn, J., Qiao, D. and Lau, S.S., Appl. Phys. Lett. 73, 2582 (1998).Google Scholar