Hostname: page-component-7bb8b95d7b-wpx69 Total loading time: 0 Render date: 2024-09-19T09:30:21.568Z Has data issue: false hasContentIssue false
  • English
  • Français

Computer Simulation of Laser Induced Temperatures for the Laser Direct Writing technique

Published online by Cambridge University Press:  26 February 2011

Didier Tonneau  and
Geoffroy Auvert
Didier Tonneau
Affiliation:
Centre National d'Etudes des Telecommunications, B.P.98, 38243 Meylan, France.
Geoffroy Auvert
Affiliation:
Centre National d'Etudes des Telecommunications, B.P.98, 38243 Meylan, France.
Get access

Abstract

Laser induced temperatures in substrates irradiated with a scanning gaussian laser beam were calculated by the finite element method. A quartz substrate of a given thickness and covered with a one - micron - thick silicon coating was assumed to be either placed on a heat sink or thermally insulated. The maximum temperature in the center of the laser spot was found to be proportional to the laser power for a spot size larger than the silicon thickness. Furthermore at a given laser power, the temperature decreased with increasing laser spot diameter and the time to reach the equilibrium temperature increases with the spot radius for radii less than the substrate thickness. The laser induced temperature was found to be affected by laser - scan speeds for speed values above the heat diffusion rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 131
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Auvert, G., Tonneau, D. and Pauleau, Y., in “Laser processing and diagnostics” Europ. Mat. Res. Soc. Symp. Proc, Bauerle, D., Kompa, K.L. and Laude, L. Eds., Les editions de Physique, Strasbourg France, June 1986,p.l09.Google Scholar
2 Tonneau, D., Auvert, G., Pauleau, Y., Thin Solid Films, (Accepted for publication) 1987.Google Scholar
3 Sedgwick, T.O., Appl. Phys. Lett. 59, (3), 1981, p.254.Google Scholar
4 Bosch, M.A. and Lemons, R.A. Phys. Rev. Lett. 47,16 (1981) p. 1151.Google Scholar
5 Nissim, Y.I., Leitola, A., Gold, R.B., Gibbons, J.F., J. Appl. Phys. 51, 1980, p.279.Google Scholar
6 Maruani, A., Nissim, Y.I., Bonnouvrier, F., Paquet, D., in “Laser-Solid Interactions and Transient Thermal Processing of Materials” Mat. Res. Soc. Proc, Narayan, J., Brown, W.L. and Lemons, R.A., Eds. Elsevier, New York, V. 13,(1983), p. 123.Google Scholar
7 Ferrieu, F., Auvert, G., J. Appl. Phys., 54, (5), 1983, p.2646.Google Scholar
8 Widdershoven, F.P., Theunissen, M.J.J., Haisma, J., in “Photon, Beam and Plasma Enhanced Processing” Nguyen, V.T., Krimmel, E.F. and Golansky, A. Eds. Eur. Mat. Res. Soc. Proc, V2 (1987), in press.Google Scholar
9 Wray, K.L., Gonnoly, T.J., J. Appl. Phys., 30, 1959, p. 1702.Google Scholar