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Compressive magnetostriction of FeSm alloy film

Published online by Cambridge University Press:  01 February 2011

Ryo Nakano ,
Yoshihito Matsumura  and
Yoshitake Nishi
Ryo Nakano
Affiliation:
6aazm016@keyaki.cc.u-tokai.ac.jp, Tokai University, Department of Metallurgical Engineering, Graduate School of Engineering, 1117 Kitakaname, Hiratsuka, 250-0853, Japan, 0463-81-1211
Yoshihito Matsumura
Affiliation:
6aazm016@keyaki.cc.u-tokai.ac.jp, Tokai University, Science and Technology, Graduate School of Science and Technology, 1117 Kitakaname, Hiratsuka, 259-1292, Japan
Yoshitake Nishi
Affiliation:
am026429@keyaki.cc.u-tokai.ac.jp, Tokai University, Science and Technology, Graduate School of Science and Technology, 1117 Kitakaname, Hiratsuka, 259-1292, Japan
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Abstract

The compressive magnetostriction values of Fe2.4Sm alloy thin film prepared on silicon, copper and titanium substrates (300μm thickness) by direct current magnetron sputtering process were investigated. When the residual gas pressure before argon sputtering and the sputtering pressure of argon gas (5 N) were below 3.2×10−4 Pa and 2.0×10−1 Pa, respectively, the thickness of the Fe2.4Sm films deposited was about 3 μm. Compressive magnetostriction of Fe2.4Sm alloy film on titanium sheet generates the large bending motion, rather than those on silicon wafer and copper substrates. The high magnetostrictive susceptibility of the films was observed at low magnetic field.

Keywords

magnetic propertiesthin filmfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1052: Symposium DD – Microelectromechanical Systems–Materials and Devices , 2007 , 1052-DD06-32
Copyright
Copyright © Materials Research Society 2008

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