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Comprehensive Study of Light-Soaking Effect in ZnO/Cu(InGa)Se2 Solar Cells with Zn-Based Buffer Layers

Published online by Cambridge University Press:  21 March 2011

Sutichai Chaisitsak ,
Akira Yamada  and
Makoto Konagai
Sutichai Chaisitsak
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguro-ku, Tokyo 152-8552, Japan, sutichai@solid.pe.titech.ac.jp
Akira Yamada
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguro-ku, Tokyo 152-8552, Japan
Makoto Konagai
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguro-ku, Tokyo 152-8552, Japan
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Abstract

The light-soaking effect in ZnO/ Cu(InGa)Se2 (CIGS) based solar cells has been studied. A CIGS thin film with Cu(InGa)(SeS)2 surface layer was obtained by selenization (H2Se)/sulfurization (H2S). A high resistively ZnO buffer layer deposited by the atomic layer deposition technique was used as a buffer layer. We found that the light-soaking effect mainly correlates with the properties of the CIGS surface, rather than with the properties of the ZnO buffer/window layer. This phenomenon can be eliminated by surface etching or doping CIGS surface with Zinc. Zinc diffusion using diethylzinc gas has been proposed in this work. To date, we have achieved efficiency of 13.9% (Voc: 560 mV, Jsc: 35.0 mA/cm2, FF: 0.71) without light soaking effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H9.10
Copyright
Copyright © Materials Research Society 2001

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References

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