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Compositional Studies of Semiconductor Alloys by Bright Field Electron Microscope Imaging of Wedged Crystals

Published online by Cambridge University Press:  26 February 2011

D. J. Eaglesham ,
C. J. D. Hetherington  and
C. J. Humphreys
D. J. Eaglesham
Affiliation:
Department of Materials Science and Engineering, Liverpool University, P O Box 147, Liverpool, L69 3BX, UK.
C. J. D. Hetherington
Affiliation:
Department of Materials Science and Engineering, Liverpool University, P O Box 147, Liverpool, L69 3BX, UK.
C. J. Humphreys
Affiliation:
Department of Materials Science and Engineering, Liverpool University, P O Box 147, Liverpool, L69 3BX, UK.
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Abstract

The use of a cleaved 90 degree wedge as a cross section sample for transmission electron microscopy allows the composition of III/V semiconductor alloys to be measured by studying the thickness fringes of the on-axis [010] bright field image. The effect is explained in terms of the incident electron Bloch states and is illustrated by reference to GaAs/AlGaAs. The technique has an accuracy of about 5% and a spatial resolution of a few Å. The range of materials that can be analysed in this way is discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 473
Copyright
Copyright © Materials Research Society 1987

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References

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