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Composition Oxidation and Chemical Etching Properties of a New Amorphous Silicon-Boron Thin Film

Published online by Cambridge University Press:  26 February 2011

B. Y. Tong ,
S. K. Wong ,
J. Yao ,
W. N. Lau ,
N. Du  and
P. K. John
B. Y. Tong
Affiliation:
Department of Physics
S. K. Wong
Affiliation:
Department of Chemistry
J. Yao
Affiliation:
Department of Physics
W. N. Lau
Affiliation:
Surface Science Western The University of Western Ontario, London, Ontario, Canada. K6A 3K7
N. Du
Affiliation:
Department of Physics
P. K. John
Affiliation:
Department of Physics
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Abstract

When silane, with more than 0.1% of diborane in the gas mixture, are co-pyrolyzed at temperatures below 540°C, an amorphous silicon-boron alloy is formed. The composition of the solid film was determined by SINS and Auger spectroscopy. The amorphous nature of the films was established by X-ray diffraction, laser Raman spectroscopy, and TEM electron diffraction. Electrical and optical properties of this material are reported. Oxidation and chemical etching of this material were also studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 191
Copyright
Copyright © Materials Research Society 1987

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References

[1] Berman, A., Chen, Z.N., Chik, X.P., John, P.K., Prasad, A., Srinivasan, G. Tong, B.Y. and Wong, S.K., J. Non-Cryst. Solids 59 & 60, 751, (1983)Google Scholar
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[4] Tong, B.Y., Wong, S.K. and John, P.K., DSS Report No. OISR31025-4-3036, (1985).Google Scholar