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Composition and Structure Characterization of WNx Films Produced by RF Reactive Sputtering

Published online by Cambridge University Press:  21 February 2011

Dongliang Lin ,
Bewda Yan  and
Weili Yu
Dongliang Lin
Affiliation:
Shanghai Jiao Tong University, Department of Materials Science and Engineering, Shanghai 200030,China
Bewda Yan
Affiliation:
Department of Materials Science and Engineering,North Carolina State University, Raleigh NC USA
Weili Yu
Affiliation:
Shanghai Jiao Tong University, Department of Materials Science and Engineering, Shanghai 200030,China
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Abstract

WNx film is one of the most promising materials for self-aligned GaAs NASFET because of its low electrical resistivity and high Schottky Barrier Height at the WNx /GaAs contact.

In this paper, the effect of the sputtering conditions and the annealing environment on the chemical composition and structure of the WNx films deposited on Si and GaAs by RF reactive sputtering are studied.

The results show that with the increase of the partial pressure ratio of nitrogen gas or decrease of the working pressure, deposition rate of WNx film decreases, whereas the atomic percentage of N in the deposited film increases before approaching saturation. The WNx films formed at high working pressure (≈5 × 10−2 torr) consist of W, WN or W2N phases depending on the nitrogen partial pressure ratio. Whereas the films formed at low working pressure (≈ 3 × 10−3 torr) are usually amorphous. Annealing in a flowing N2 gas causes the crystallization of the amorphous films, which mainly consist of W+W2N. There is no change for the crystalline films. However, annealing in H2 gas causes severe loss of nitrogen of the film, the film becoming single W phase eventually.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 161
Copyright
Copyright © Materials Research Society 1990

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References

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