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Competition Between Solid Phase Epitaxy and Random Crystallization During cw Laser Annealing of Amorphous Si Films

Published online by Cambridge University Press:  15 February 2011

J.A. Roth ,
S.A. Kokorowski ,
G.L. Olson  and
L.D. Hess
J.A. Roth
Affiliation:
Hughes Research Laboratories, 3011 Malibu Cyn. Rd., Malibu, CA 90265
S.A. Kokorowski
Affiliation:
Hughes Research Laboratories, 3011 Malibu Cyn. Rd., Malibu, CA 90265
G.L. Olson
Affiliation:
Hughes Research Laboratories, 3011 Malibu Cyn. Rd., Malibu, CA 90265
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Abstract

The kinetics of amorphous-to-polycrystalline conversion and solid phase epitaxy (SPE) in UHV-deposited Si films have been determined over a wide temperature range by the use of optical reflectivity measurements made during rapid heating by a cw Ar laser. Crystallization rates measured in UHV following film deposition are reported and compared to rates measured in air in order to elucidate the effects of contaminants on the processes. The effects of boron doping on nucleation and growth kinetics are also reported. The crystallization rates determined in these studies can be used to predict the volume fraction of polycrystalline material formed during laserinduced SPE growth of thick epitaxial layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 169
Copyright
Copyright © Materials Research Society 1982

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References

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