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Comparisons of Gallium Nitride and Indium Nitride Properties after CF4 / Argon Reactive Ion Etching

Published online by Cambridge University Press:  11 February 2011

Marie Wintrebert-Fouquet ,
K. Scott ,
A. Butcher  and
Simon K H Lam
Marie Wintrebert-Fouquet
Affiliation:
Physics Department, Macquarie University, Sydney NSW 2109, Australia
K. Scott
Affiliation:
Physics Department, Macquarie University, Sydney NSW 2109, Australia
A. Butcher
Affiliation:
Physics Department, Macquarie University, Sydney NSW 2109, Australia
Simon K H Lam
Affiliation:
CSIRO Telecommunications & Industrial Physics, PO Box 218, Lindfield, NSW 2070, Australia
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Abstract

We present a comparative study of the effects of low power reactive ion etching (RIE) on GaN and InN. This new, highly chemical, dry etching, using CF4 and Ar, has been developed for thin nitride films grown at low temperature in our laboratories. GaN films were grown by remote plasma enhanced-laser induced chemical vapor deposition and InN films were grown by radio-frequency RF reactive sputtering. Commercial GaN samples were also examined. Optical and electrical characteristics of the films are reported before and after removing 100 to 200 nm of the film surface by RIE. We have previously shown that the GaN films, although polycrystalline after growth, may be re-crystallized below the growth temperature. Removal of the surface oxide has been found to be imperative since a polycrystalline residue remains on the surface after re-crystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.55
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Pearton, S.J., Shul, R.J. and Ren, Fan, Internet J. Nitride Semicond. Res. 5, 11 (2000).Google Scholar
2. Karouta, F., Jacobs, B., Vreugdewater, P., Melick, N.G.H.V., Protzmann, Oschon H., and Heuken, M., Electrochem. and Solid State, 2, 5, 240 (1999).Google Scholar
3. Butcher, K.S.A., Afifuddin, , Chen, P. P.-T., Godlewski, M., Szczerbakow, A., Goldys, E.M. and Tansley, T. L., J. Crys. Growth (in press)Google Scholar
4. Lee, H., Oberman, D.B. and Harris, J.S. Jr, Appl. Phys. Lett. 67 (12) 1754 (1995).Google Scholar
5. Chang, S.J., Juand, Y.Z., Nayak, D.K. and Shiraki, Y., Mater. Chem.and Phys. 60, 22 (1999).Google Scholar
6. Butcher, K.S.A., Timmers, H., Afifuddin, ,, Chen, P. P. -T., Weijers, T.D.M., Goldys, E.M. and Tansley, T. L., Elliman, R.G., and Freitas, J.A. Jr, J. Appl. Phys., 92, 6, 3397 (2002).Google Scholar
7. Eddy, C.R. Jr and Molnar, B., J. of Electronics and Mat., 28, 3, 314 (1999).Google Scholar