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Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide

Published online by Cambridge University Press:  21 February 2011

Carl-Mikael Zetterling  and
Mikael Östling
Carl-Mikael Zetterling
Affiliation:
Royal Institute of Technology, Solid State Electronics, Kista-Stockholm, Sweden
Mikael Östling
Affiliation:
Royal Institute of Technology, Solid State Electronics, Kista-Stockholm, Sweden
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Abstract

Monocrystalline 6H silicon carbide samples (n-type and p-type) with both carbon face and silicon face have been used to investigate gate oxide quality. The oxides were thermally grown in a dry oxygen ambient at 1523 K with or without the addition of TCA (Trichloroethane), or in wet pyrogenic steam at 1473 K. POCI3 doped polysilicon gates were used for electrical characterisation by capacitance-voltage measurements and breakdown field measurements. Large flatband voltage shifts indicate fixed oxide charges up to 1013 cm-2. The incorporation of aluminum in the oxides was monitored using SIMS (Secondary Ion Mass Spectrometry). Surprisingly high signals were interpreted as evidence of an aluminum-Oxygen compound having been formed (ie Al2O3).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 209
Copyright
Copyright © Materials Research Society 1994

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References

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