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Comparison of the Subband Transitions in Asymmetric and Symmetric GaAs/InxGa1-xAs/AlyGa1-yas Quantum Wells

Published online by Cambridge University Press:  21 February 2011

K. Pieger ,
J. Straka ,
A. Forchel ,
V. Kulakovskii  and
T.L. Reinecke
K. Pieger
Affiliation:
Technische Physik, University of Würzburg, Am Hubland, 97074 Würzburg, Germany
J. Straka
Affiliation:
Technische Physik, University of Würzburg, Am Hubland, 97074 Würzburg, Germany
A. Forchel
Affiliation:
Technische Physik, University of Würzburg, Am Hubland, 97074 Würzburg, Germany
V. Kulakovskii
Affiliation:
Inst. of Solid State Physics, Russian Academy of Science, 142432 Chernogolovka, Russia
T.L. Reinecke
Affiliation:
Naval Research Laboratory, Electronic Materials Branch, Washington, DC 20375, USA
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Abstract

Shallow symmetric and asymmetric GaAs/InGaAs/(Al)GaAs single quantum wells with an indium content of 5% and less, grown by MBE, show striking differences in their photoluminescence spectra. Unlike the symmetric case, the asymmetric quantum wells are found to have no bound ground state below a certain thickness, which depends on the indium content of the quantum well and the aluminium content of the barrier. For a set of asymmetric samples investigated here, the bound state vanishes at about 60Å.

Photoluminescence excitation measurements on shallow symmetric and asymmetric wells show a series of narrow lines with oscillator strengths many times exceeding those of the band to band transition. These lines can be identified with excited excitonic transitions including heavy and light holes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 579
Copyright
Copyright © Materials Research Society 1994

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