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Comparison of Mocvd Precursors for Hf1-xSixO2 Gate Dielectric Deposition

Published online by Cambridge University Press:  01 February 2011

B.C. Hendrix ,
A.S. Borovik ,
Z. Wang ,
C. Xu ,
J.F. Roeder ,
T. H. Baum ,
M.J. Bevan ,
M.R. Visokay ,
J.J. Chambers  and
A.L.P. Rotondaro
...Show all authors
B.C. Hendrix
Affiliation:
ATMI, 7 Commerce Drive, Danbury, CT 06810, U.S.A.
A.S. Borovik
Affiliation:
ATMI, 7 Commerce Drive, Danbury, CT 06810, U.S.A.
Z. Wang
Affiliation:
ATMI, 7 Commerce Drive, Danbury, CT 06810, U.S.A.
C. Xu
Affiliation:
ATMI, 7 Commerce Drive, Danbury, CT 06810, U.S.A.
J.F. Roeder
Affiliation:
ATMI, 7 Commerce Drive, Danbury, CT 06810, U.S.A.
T. H. Baum
Affiliation:
ATMI, 7 Commerce Drive, Danbury, CT 06810, U.S.A.
M.J. Bevan
Affiliation:
Texas Instruments, PO Box 650311 M/S 3737, Dallas TX 75265, U.S.A.
M.R. Visokay
Affiliation:
Texas Instruments, PO Box 650311 M/S 3737, Dallas TX 75265, U.S.A.
J.J. Chambers
Affiliation:
Texas Instruments, PO Box 650311 M/S 3737, Dallas TX 75265, U.S.A.
A.L.P. Rotondaro
Affiliation:
Texas Instruments, PO Box 650311 M/S 3737, Dallas TX 75265, U.S.A.
H. Bu
Affiliation:
Texas Instruments, PO Box 650311 M/S 3737, Dallas TX 75265, U.S.A.
L. Colombo
Affiliation:
Texas Instruments, PO Box 650311 M/S 3737, Dallas TX 75265, U.S.A.
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Abstract

This study investigates and compares the deposition of Hf1-xSixO2 films from two suites of metalorganic CVD precursors. The first precursor suite has oxygen coordinated to the Si or Hf center and includes β-diketonate, alcoxide and acetoxy ligands. The second precursor suite has alkylamido ligands, which have nitrogen coordinated to the Hf or Si center. The process space for deposition of silicates was evaluated for controlling the composition of the silicate films while optimizing deposition rates for a manufacturable single-wafer process. The composition of the film, x, is controlled over the entire range by changing the composition of the precursor solution, Si:Si+Hf. The composition of the films, including hafnium, silicon, oxygen, carbon, and nitrogen content were measured by XPS. Both suites of precursors provide routes by which composition can be controlled in fully oxidized films with low carbon and nitrogen content. Film deposition rates are consistent with manufacturing requirements. The interfacial layers that were observed by HRTEM between the film and the substrate were thin (< 10Å) and possibly graded in composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B6.7
Copyright
Copyright © Materials Research Society 2002

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