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Comparison of low temperature growth of Si thin films on amorphous substrates by MBE and PECVD methods

Published online by Cambridge University Press:  17 March 2011

J. A. Anna Selvan ,
D. Grützmacher ,
E. Müller ,
M. Rebien ,
M. Kummer ,
H. von Känel  and
J. Gobrecht
J. A. Anna Selvan
Affiliation:
Laboratory for Micro and Nanotechnology, Paul-Scherrer Institute, CH-5232 Villigen, Switzerlande-mail:anna.selvan@psi.ch
D. Grützmacher
Affiliation:
Laboratory for Micro and Nanotechnology, Paul-Scherrer Institute, CH-5232 Villigen, Switzerland
E. Müller
Affiliation:
Laboratory for Micro and Nanotechnology, Paul-Scherrer Institute, CH-5232 Villigen, Switzerland
M. Rebien
Affiliation:
Hahn-Meitner-Institut, Abt. Silicium-Photovoltaik, D-12489 Berlin, Germany
M. Kummer
Affiliation:
Laboratorium für Festkoerperphysik, ETHZ,CH-8093 Zürich
H. von Känel
Affiliation:
Laboratorium für Festkoerperphysik, ETHZ,CH-8093 Zürich
J. Gobrecht
Affiliation:
Laboratory for Micro and Nanotechnology, Paul-Scherrer Institute, CH-5232 Villigen, Switzerland
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Abstract

Low temperature growth of thin crystalline Si films on amorphous glass substrates by Molecular Beam Epitaxy (MBE) as well as by two different plasma enhanced chemical vapour deposition (PECVD) systems both using a DC plasma was carried out and the mictrostructural properties were analysed. In particular, the control over the texture along [220] orientation and the resulting columnar nature of the films were studied. The TEM cross section of Si films grown by MBE shows grains with an average width of 750 nm and a length of 3 microns. Using the low energy PECVD (LEPECVD) technique microcrystalline Si films were obtained with a growth rate of up to 35Å/sec. For high quality Si films with larger grains one may grow Si films by MBE whereas for Si films with passivated grain boundaries and for increased deposition rate, it is preferred to grow Si films by the newly developed methods of DC-PECVD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A19.4
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

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