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Comparison of Electromigration Induced Resistance Changes in Multilayer Al-Si/Ti and Al-Si/Ta Interconnects

Published online by Cambridge University Press:  28 February 2011

M. Finetti ,
I. Suni ,
G. Desanti ,
L. Bacci  and
C. Caprile
M. Finetti
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli, 1 - 40126 Bologna (Italy)
I. Suni
Affiliation:
Technical Research Center of Finland, Semiconductor Laboratory, Otakaari 7B-02150 Espoo 15 (Finland)
G. Desanti
Affiliation:
SGS Microelettronica, Via Olivetti, 2 - 20041 Agrate Brianza (Italy)
L. Bacci
Affiliation:
SGS Microelettronica, Via Olivetti, 2 - 20041 Agrate Brianza (Italy)
C. Caprile
Affiliation:
SGS Microelettronica, Via Olivetti, 2 - 20041 Agrate Brianza (Italy)
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Abstract

We have applied a temperature-ramp resistance analysis to investigate electromigration effects in unpassivated Al-Si/Ta multilayer structures. The results are compared to the behaviour previously observed in Al-Si/Ti interconnects. For comparison, single layer Al-Si metallizations were also studied.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 297
Copyright
Copyright © Materials Research Society 1986

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