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Comparison Of Dry-Etch Techniques For Gan, Inn, And Ain

Published online by Cambridge University Press:  10 February 2011

R. J. Shul ,
G. A. Vawter ,
C. G. Willison ,
M. M. Bridges ,
J. W. Lee ,
S. J. Pearton  and
C. R. Abernathy
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603, rjshul@sandia.gov
G. A. Vawter
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603, rjshul@sandia.gov
C. G. Willison
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603, rjshul@sandia.gov
M. M. Bridges
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603, rjshul@sandia.gov
J. W. Lee
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
S. J. Pearton
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
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Abstract

Fabrication of group-III nitride devices relies on the ability to pattern features to depths ranging from ∼1000 Å to > 5 μm with anisotropic profiles, smooth morphologies, selective etching of one material over another, and a low degree of plasma-induced damage. In this study, GaN etch rates and etch profiles are compared using reactive ion etch (RIE), reactive ion beam etching (RIBE), electron cyclotron resonance (ECR), and inductively coupled plasma (ICP) etch systems. RIE yielded the slowest etch rates and sloped etch profiles despite dc-biases > −900 V. ECR and ICP etching yielded the highest rates with anisotropic profiles due to their high plasma flux and the ability to control ion energies independently of plasma density. RIBE etch results also showed anisotropic profiles with slower etch rates than either ECR or ICP possibly due to lower ion flux. InN and AIN etch characteristics are also compared using ICP and RIBE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 103
Copyright
Copyright © Materials Research Society 1998

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