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Comparison of Conductance and Capacitance techniques for Measurement of Interface States in Thin Oxides

Published online by Cambridge University Press:  21 March 2011

T. K. Higman
T. K. Higman*
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota 200 Union St. S.E.Minneapolis, Minnesota 55455, U.S.A
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Abstract

Current trends in integrated circuit processing project gate insulators with oxide equivalent thicknesses of 1.5 to 1.0 nm. Gate oxides in this thickness range have oxide capacitances of 1 to 5 μF/cm2. When oxide capacitances are this large, traditional high-frequency capacitance-voltage techniques for measuring interface states can be inaccurate. We show that a combination of high and low frequency capacitance-voltage data, along with frequency dependent conductance methods, produce more accurate results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K4.9
Copyright
Copyright © Materials Research Society 2001

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References

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