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Comparative Analysis of MBE-grown GaN Films on SiC, ZnO and LiGaO2 Substrates
Published online by Cambridge University Press: 01 February 2011
Abstract
We report the growth of GaN films by RF-MBE on SiC, ZnO, and LiGaO2 substrates, without buffer layers. Structural and optical properties of the films were probed by AFM for surface morphology, XRD for crystalline structure, and PL for optical properties. The dependence of GaN layer quality on the substrates and their surface pre-treatment prior to growth was studied within a similar MBE growth parameter matrix for all samples.
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- Copyright © Materials Research Society 2002
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