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Combining X-Ray Diffraction and Substrate Deflection Analysis to Understand Internal Stress in Electroless Copper Films

Published online by Cambridge University Press:  07 January 2013

Tanu Sharma
Affiliation:
Physics Department, Mount Allison University, Sackville NB, Canada E4L 1E6
Ralf Brüning
Affiliation:
Physics Department, Mount Allison University, Sackville NB, Canada E4L 1E6
Delilah A. Brown
Affiliation:
Physics Department, Mount Allison University, Sackville NB, Canada E4L 1E6
Simon Bamberg
Affiliation:
Atotech Deutschland GmbH, Erasmusstrasse 20, D-10553 Berlin, Germany Department of Chemistry, Chemical Engineering Division, Technical University Berlin, Strassedes 17. Juni 124, 10623 Berlin, Germany
Michael Merschky
Affiliation:
Department of Chemistry, Chemical Engineering Division, Technical University Berlin, Strassedes 17. Juni 124, 10623 Berlin, Germany
Frank Brüning
Affiliation:
Department of Chemistry, Chemical Engineering Division, Technical University Berlin, Strassedes 17. Juni 124, 10623 Berlin, Germany
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Abstract

Electroless copper films are usually the first conducting layer on the insulating substrates of printed circuit boards. For this and other emerging applications, the internal stress of the copper layer is an important consideration both for film adhesion and film-substrate interaction. We have combined stress/strain analysis based on X-ray diffraction, which is sensitive to the strain of the copper crystallites, with a conventionally used technique that analyses the bending of the substrate (Deposit Stress Analyzer). Both techniques were implemented in such a way that the stress could be monitored continuously during the deposition of the films from the electroless plating bath as well as afterwards. These tests were carried out for three chemical formulations and the results from both techniques agree qualitatively. For one bath, the substrate bending method detects a 60 nm region of local stress at the film-surface interface.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

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