Hostname: page-component-7bb8b95d7b-dvmhs Total loading time: 0 Render date: 2024-10-06T12:26:53.987Z Has data issue: false hasContentIssue false
  • English
  • Français

Coherent Precipitate Formation In Pulsed-Laser And Thermally-Annealed,Ion-Implanted Si.

Published online by Cambridge University Press:  15 February 2011

B. R. Appleton ,
J. Narayan ,
O. W. Holland  and
S. J. Pennycook
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
Get access

Abstract

It Will be shown that under suitable conditions ion implanted impurities in Si can precipitate and grow coherently within the single crystal lattice during recrystallization induced by pulsed laser or thermal annealing. Ion channeling and transmission electron microscopy (Tem) were used to characterize such precipitates in Si implanted with Sb and B and thermally annealed, and in Si implanted with Tl and annealed with a pulsed ruby laser.The orientations of these precipitates were determined from TEM and detailed angular scans using ion scattering channeling.The nucleation and precipitation processes will be discussed in terms of differences in the liquid and solid phase regrowth mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 281
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

*Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.Mat. Res.

References

1.Laser and Electron-Beam Interactions with Solids, ed. by Appleton, B. R. and Celler, G. K., North Holland, New York, 1982.Google Scholar
2.Laser and Electron-Beam Solid Interactions and Materials Processing, ed. by Gibbons, J. F., Hess, L. D. and Sigmon, T. W., North Holland, New York, 1981.Google Scholar
3.Laser and Electron Beam Processing of Materials, ed. by White, C. W. and Peercy, P.S., Academic Press, New York, 1980.Google Scholar
4.Narayan, J. and Holland, O. W., Appl. Phys. Lett. 41, 239 (1982) and references therein.Google Scholar
5.White, C. W., Wilson, S. R., Appleton, B. R., and Young, F. W., Jr., J. Appl.Phys. 51, 738 (1980) and references therein.Google Scholar
6.Narayan, J., Appl. Phys. Lett. 34, 312 (1979).Google Scholar
7.White, C. W., p. 109, ibid 1.Google Scholar
8.Appleton, B. R., Narayan, J., White, C. W., Williams, J. S. and Short, K. T.,submitted for publication in the Proceedings of the 1982 Ion Beam Modification of Materials Conference, Grenoble, France, September 6–10, 1982.Google Scholar
9.Eriksson, L., Bellavance, G. R., and Davies, J. A., Rad. Eff. 1, 71 (1969).Google Scholar
10.Eriksson, L., Davies, J. A., Johansson, N.G.E., and Mayer, J. W., J. Appl.Phys. 40, 843 (1969).Google Scholar
11.Fladda, G., Mazzoldi, P., Rimini, E., Sigurd, D., and Eriksson, L., Rad. Eff. 1,249 (1969).Google Scholar
12.Eriksson, L., Fladda, G., and Bjorkqvist, K., Appl. Phys. Lett. 14, 195 (1969).Google Scholar
13.Dormeij, B., Fladda, G., and Johansson, N.G.E., Rad. Eff. 6, 155 (1970).Google Scholar
14.Narayan, J., Holland, O. W. and Appleton, B. R., submitted for publication.Google Scholar
15. See for example papers and references in Laser and Electron-Beam Interactions with Solids, ed. by Appleton, B. R. and Celler, G. K., North Holland, New York, 1982.Google Scholar
16. By analogy with data from Bachman, K. J., p. 502 in Current Topics in Materials Science, Vol. 3, ed. by Kaldis, E., North Holland, New York, 1979.Google Scholar
17.Constitution of Binary Alloys by Hansen, M., McGraw-Hill, New York, 1958.Google Scholar
18.Diffusion in Semiconductors by Boltaks, N. I., Academic Press, New York, 1963.Google Scholar