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Clustering in the Epitaxial Growth of GaAs ON Si

Published online by Cambridge University Press:  26 February 2011

Martin Zinke-Allmang ,
L.C. Feldman ,
S. Nakahara  and
J.R. Patel
Martin Zinke-Allmang
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L.C. Feldman
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. Nakahara
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J.R. Patel
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We report ion scattering and TEM investigations of the first layers of GaAs grown on clean Si(111). Based on observations of pure Ga cluster growth on As terminated Si(111) we propose a model for GaAs growth on Si, where Ga atoms are mobile and tend to cluster, but are immobilized by arriving As. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 431
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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