Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-25T17:02:37.168Z Has data issue: false hasContentIssue false
  • English
  • Français

Cleaning Technologies using Electrolytic Ionized Water and Analysis Technology of Fine Structures for Next Generation Device Manufacturing

Published online by Cambridge University Press:  10 February 2011

Hidemitsu Aoki ,
Shinya Yamasaki ,
Masaharu Nakamori ,
Nahomi Aoto ,
Koji Yamanaka ,
Takashi Imaoka  and
Takashi Futatsuki
Hidemitsu Aoki
Affiliation:
ULSI Device Development Laboratories, NEC Corporation 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan, aoki-mf@lsi.tmg.nec.co.jp
Shinya Yamasaki
Affiliation:
ULSI Device Development Laboratories, NEC Corporation 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan, aoki-mf@lsi.tmg.nec.co.jp
Masaharu Nakamori
Affiliation:
ULSI Device Development Laboratories, NEC Corporation 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan, aoki-mf@lsi.tmg.nec.co.jp
Nahomi Aoto
Affiliation:
ULSI Device Development Laboratories, NEC Corporation 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan, aoki-mf@lsi.tmg.nec.co.jp
Koji Yamanaka
Affiliation:
Central Research Laboratories, ORGANO Corporation
Takashi Imaoka
Affiliation:
Central Research Laboratories, ORGANO Corporation
Takashi Futatsuki
Affiliation:
Central Research Laboratories, ORGANO Corporation
Get access

Abstract

To reduce the consumption of chemicals and ultra pure water (UPW) in cleaning processes used in device manufacturing, we have developed wet processes that use electrolytic ionized water (EIW), which is generated by the electrolysis of a diluted electrolyte solution or UPW. EIW can be controlled for wide ranges of pH and oxidation-reduction potential. Anode EIW with diluted electrolyte, which has high oxidation potential, can remove metallic contamination such as Cu and Fe on Si surfaces. EIW contains less than 1/100 of the amount of chemicals contained in conventional cleaning solutions, thus drastically reduces chemical consumption in wet processes. Moreover, electrolyzed UPW can be used as a substitute for conventional UPW to achieve better rinsing characteristics. Electrolyzed UPW reduces the level of residual SO42− ions after SPM cleaning more efficiently than conventional UPW. Thus the amount of rinse water needed is reduce to 1/6 that of the conventional UPW rinse.

We also developed a method for analyzing remaining metallic contamination and residual ions in deep-submicron-diameter holes with high aspect ratios. The method is based on conventional atomic absorption spectrometry (AAS), and uses device patterns with high density contact holes. With this method, metallic (Fe) contamination on the order of 1010 atoms/cm2 can be easily analyzed inside 0.1 μm-diameter holes with an aspect ratio of 10. The residual ions in the fine holes can also be detected by thermal desorption spectroscopy (TDS).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 501
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Kem, W. and Puotinen, D. A., RCA Review, 31,187–206 (1970).Google Scholar
[2] Ohmi, T., Imaoka, T., Kezuka, T., Takano, J. and Kogure, M., J. Electrochem. Soc., 140, 811–818 (1993).10.1149/1.2056164CrossRefGoogle Scholar
[3] Christenson, K. K., Smith, S. M. and Werho, D., Microcontamination, June, 47–53 (1994).Google Scholar
[4] Ohnishi, T., Endo, M., Yano, K. and Nomura, N., Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Makuhari, 627–629 (1993).Google Scholar
[5] Shimono, T., Morita, M., Muramatsu, Y. and Tsuji, M., Proceedings of 8th Workshop on ULSI Ultra Clean Technology, 59–68 (1990).Google Scholar
[6] Aoki, H., Nakamori, M., Aoto, N. and Ikawa, E., Jpn. J. Appl. Phys. Vol.33. 5686 (1994).10.1143/JJAP.33.5686CrossRefGoogle Scholar
[7] Aoki, H., Yamasaki, S., Shiramizu, Y., Aoto, N., Imaoka, T., Futatsuki, T., Yamashita, Y., and Yamanaka, K., Proc. of Int. Conf. on Solid State Devices and Materials, Osaka, Aug. 1995, pp. 252–254.Google Scholar
[8] Shiramizu, Y., Watanabe, K., Tanaka, M., Aoki, H. and Kitajima, H., J. Electrochem. Soc. Vol.143, No. 5, 1632–1635(1996).10.1149/1.1836690CrossRefGoogle Scholar
[9] Yamanaka, K., Imaoka, T., Futatsuki, T., Yamasaki, S., and Aoki, H., Proc. of Semiconductor Pure Water and Chemicals Conference, Santa Clara, Feb. 1995, pp. 1–22.Google Scholar
[10] Aoki, H., Nakajima, T., Kikuta, K., and Hayashi, Y., Proc. of Symp. on VLSI. Tech., Tokyo, May. 1994, pp. 79–80.Google Scholar
[11] Yamanaka, K., Futatsuki, T., Aoki, H., Nakamori, M. and Aoto, N., Proc. of Inter national Symposium on Semiconductor Manufacturing., Tokyo, 1996, pp. 200–203.Google Scholar
[12] Yamanaka, K., Futatsuki, T., Yamasita, Y., Aoki, H. and Aoto, N., Proc. of Semiconductor Pure Water and Chemicals Conference, Santa Clara, Mar. 1997, pp. 99–108.Google Scholar
[13] Aoki, H., Yamasaki, S., and Aoto, N., Proc. of Int. Conf. on Solid State Devices and Materials, Yokohama, Aug. 1996, pp. 154–156.Google Scholar
[14] Aoki, H., Teraoka, Y., Ikawa, E., Kikkawa, T. and Nishiyama, I., J. Vac. Sic. Technol. A13 (1), 1995, pp. 42–46.10.1116/1.579441CrossRefGoogle Scholar
[15] Yamasaki, S., Aoki, H. and Aoto, N., Extended Abstracts (The 44th Spring Meeting) of The Japan Society of Applied Physics and Related Societies, Chiba. 1997, pp. 775.Google Scholar
[16] Ohmi, T. et al. , Proc. of 24th Symp. of Ultra Clean Technology (1995) p. 3.Google Scholar
[17] Krusell, W. C., de Larios, J. M., Zhang, J.: Mechanical brush scrubbing for post-CMP clean, Solid State Technology, June 1995, p. 109.Google Scholar
[18] Sakai, et al. , Proc. of Symp. on post-CMP Cleaning System on Semiconductor Manufacturing, p.169.Google Scholar
[19] Koito, T., Tech. Rep. of Institute of Electronics Information and Communication Engineers, Vol.96. No. 356 (1996) pp. 63–69.Google Scholar