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Cleaning and Oxidation of Heavily Doped Si Surfaces

Published online by Cambridge University Press:  25 February 2011

T. Yasaka ,
S. Uenaga ,
H. Yasutake ,
M. Takakura ,
S. Miyazaki  and
M. Hirose
T. Yasaka
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima724, Japan
S. Uenaga
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima724, Japan
H. Yasutake
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima724, Japan
M. Takakura
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima724, Japan
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima724, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima724, Japan
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Abstract

HF-treated Si surfaces and the oxidation kinetics in pure water or in clean room air have systematically been studied by x-ray photoelectron spectroscopy (XPS). The oxidation of heavily-doped n-type Si appears to proceed parallel to the surface, resulting in the layer-by-layer oxidation. The oxide growth rate in pure water for heavily-doped n-type Si is significantly higher than that of heavily-doped ptype Si. This is explained by the electron tunneling from the Si conduction band to adsorbed O2 molecules to form the O2 state. O2 ions easily decompose and induce a surface electric field, enhancing the oxidation rate. The growth rate of native oxide on heavily-doped n-type Si is less sensitive to the crystallographic orientations than the case of lightly doped Si where the steric hindrance against oxygen molecules significantly lowers the oxidation rate of the (110) and (111) surfaces. We suggest that the decomposed oxygen can penetrate into Si without steric hindrance. It is also found that the oxidation of heavily-doped n-type Si in pure water is effectively suppressed by adding a small amount (10 ∼ 3600 ppm) of HCI.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 385
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Higashi, G S., Chabal, Y. J., Trucks, G. W. and Raghavachari, K.: Appl. Phys. Lett., 56 (1990) 656.Google Scholar
[2] Sunada, T., Yasaka, T., Takakura, M., Sugiyama, T., Miyazaki, S. and Hirose, M.: Jpn. J. Appl. Phys., 29 (1990) L 2408.Google Scholar
[3] Yasaka, T., Takakura, M., Miyazaki, S. and Hirose, M.: Mat. Res. Soc. Symp. Proc., Vol. 222 (1991) 225.Google Scholar
[4] Morita, M., Ohmi, T., Hasegawa, E., Kawakami, M. and Suma, K.: Appl. Phys. Lett., 55 (1989) 562.Google Scholar
[5] Herman, F., Batra, J. P. and Kasowski, V., The Physics of SiO2 and Its Interface: ed. by Pantelides, S. (Pergamon Press, NY 1978) p.333.Google Scholar
[6] Raider, S. I. and Forget, L. E.: J. Electrochem. Soc., 127 (1980) 1783.Google Scholar
[7] Watanabe, S., Shigeo, M., Nakayama, N. and Ito, T.: Extended Abstracts of 1991 Intern. Conf. on Solid State Devices and Materials (1991, Yokohama) 502.Google Scholar
[8] Sawara, K., Yasaka, T., Miyazaki, S. and Hirose, M.: IEICE, Technical Report 91 (1991) 5 [In Japanese].Google Scholar