Hostname: page-component-7479d7b7d-8zxtt Total loading time: 0 Render date: 2024-07-13T23:54:29.875Z Has data issue: false hasContentIssue false

Circuit-Level and Layout-Specific Interconnect Reliability Assessments

Published online by Cambridge University Press:  17 March 2011

S.P. Hau-Riege
Affiliation:
Department of Materials Science and Engineering, M.I.T., Cambridge, MA
C.V. Thompson
Affiliation:
Department of Materials Science and Engineering, M.I.T., Cambridge, MA
C.S. Hau-Riege
Affiliation:
Department of Materials Science and Engineering, M.I.T., Cambridge, MA
V.K. Andleigh
Affiliation:
Department of Materials Science and Engineering, M.I.T., Cambridge, MA
Y. Chery
Affiliation:
Department of Electrical Engineering and Computer Science, M.I.T., Cambridge, MA
D. Troxel
Affiliation:
Department of Electrical Engineering and Computer Science, M.I.T., Cambridge, MA
Get access

Abstract

We have developed a methodology and a prototype tool for making computationally efficient circuit-level assessments of interconnect reliability. A key component of this process has been the development of simple analytic models that relate the reliability of the complex structures in layouts to the simpler straight, junction-free lines of uniform width that are typically used in lifetime tests. We have considered interconnect trees as the fundamental reliability units, where trees can have multiple junctions and limbs, and can also have width variations. We have developed analytic methods for identifying trees which are immune to failure, and have demonstrated that computationally simple techniques lead to the identification of a large fraction of the trees in a circuit as immune to failure (i.e., that they are ‘immortal’). These trees therefore need not be considered in further analyses. Using simulations and analytic treatments we have also developed default models which allow estimation of the reliability of the remaining trees. These models have been tested and validated them through experiments on simple tree structures with junctions and line-width transitions. Our prototype circuit-level reliability analysis tool projects the reliability of circuits based on specific layouts, and provides a rank listing of the reliability of mortal trees. This allows the user to accept the assessment as is, to carry out more accurate but computationally-intensive analyses of the least reliable trees, or to modify the layout or process to address reliability concerns and reanalyze the reliability.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Schafft, H. A., IEEE Trans. ED 34, 664 (1987).Google Scholar
[2] Riege, S. P., Thompson, C. V., and Clement, J. J., IEEE Trans. ED 45, 2254 (1998).10.1109/16.725264Google Scholar
[3] Clement, J.J., Riege, S.P., Cvijetic, R., Thompson, C.V., IEEE Trans. CAD 18, 576 (1999).10.1109/43.759073Google Scholar
[4] Thompson, C.V., Riege, S.P., and Andleigh, V., AIP Conference Proceedings 491 of the 5th International Workshop on Stress-Induced Phenomena in Metallization, Stuttgart, Germany, pp.62 (1999).Google Scholar
[5] Park, Y.-J. and Thompson, C.V., J. Appl. Phys. 82, 4277 (1997).10.1063/1.366234Google Scholar
[6] Park, Y.-J., Andleigh, V.K., and Thompson, C.V., J. Appl. Phys. 85, 3546 (1999).10.1063/1.369714Google Scholar
[7] A demonstration of MIT/EmSim is accessible on the World Wide Web at http://nirvana.mit.edu/emsim.Google Scholar
[8] Andleigh, V. K., Srikar, V. T., Park, Y.-J., and Thompson, C. V., J. Appl. Phys. 86, 6737 (1999).10.1063/1.371750Google Scholar
[9] Korhonen, M. A., Boergesen, P., Tu, K.N., and Li, Che-Yu, J. Appl. Phys. 73, 3790 (1993).10.1063/1.354073Google Scholar
[10] Hau-Riege, S.P. and Thompson, C.V., these proceedings.Google Scholar
[11] Hau-Riege, S.P. and Thompson, C. V., “The Effects of the Mechanical Properties of the Confinement Material on Electromigration in Metallic Interconnects”, submitted to J. Mat. Res.Google Scholar
[12] Shen, Y.-L., Proc. 37th Int. Reliab. Phys. Symp. 283 (1999).Google Scholar
[13] Filippi, R.G., Biery, G.A., and Wachnik, R.A., J. Appl. Phys. 78, 3756 (1995).10.1063/1.360749Google Scholar
[14] Kraayeveld, J.R., Verbruggen, A.H., Willemsen, W.-J., and Radelaar, S., Appl. Phys. Lett. 67, 1226 (1995).10.1063/1.115015Google Scholar
[15] Hau-Riege, S. P. and Thompson, C. V., “Modeling and Experimental Characterization of The Reliability of Interconnect Trees”, submitted to J. Appl. Phys., submission number JR00-0361.Google Scholar
[16] Stoer, J. and Bulirsch, R., Introduction to Numerical Analysis, Springer-Verlag, New York, NY (1980).10.1007/978-1-4757-5592-3Google Scholar
[17] Hau-Riege, S. P. and Thompson, C. V., “Electromigration-Saturation in a Simple Interconnect Tree”, submitted to J. Appl. Phys.Google Scholar
[18] Hau-Riege, C.S. and Thomson, C.V., submitted to J. Appl. Phys., submission number JR00-0197.Google Scholar
[19] Fayad, W. and Thompson, C.V., An Analytic Model for the Development of Bamboo Microstructures in Thin Film Strips Undergoing Normal Grain Growth, submitted for publication to Phys. Rev. B, February 2000.10.1103/PhysRevB.62.5221Google Scholar
[20] Fayad, W. and Thompson, C.V., Modeling texture Effects on Electromigration-Limited Reliability in Bamboo Interconnects, submitted for publication to J. Material Research February 2000.Google Scholar
[21] Edelstein, D., Heidenreich, J., Goldblatt, R., Cote, W., Uzoh, C., Lustig, N., Roper, P., McDevitt, T., Motsiff, W., Simon, A., Dukovic, J., Wachnik, R., Rathore, H., Schulz, R., Su, L., Luce, S., and Slattery, J., IEEE Intl. Electron Devices Meeting Digest, 773 (1997).Google Scholar
[22] Hu, C.-K., Rosenberg, R., and Lee, K.Y., Applied Physics Letters 74, 2945 (1999).10.1063/1.123974Google Scholar
[23] Price, D.T., Gutmann, R.J., and Murarka, S.P., Thin Solid Films 308–309, 523 (1997).10.1016/S0040-6090(97)00479-3Google Scholar
[24] Lau, K.S.Y., Drage, J.S., Hacker, N.P., Rutherford, N.M., Katsanes, R.R., Korolev, B.A., Krajewski, T.A., Lefferts, S.P., Sayad, H., Sebahar, P.R., Smith, A.R., Wan, W.B., and White, E.C., Proceedings Thirteenth International VLSI Multilevel Interconnection Conference (VMIC), pp. 92–7. Tampa, FL (1996).Google Scholar
[25] Waeterloos, J., Simmonds, M., Achen, A., and Meier, M., Europ. Semicond. 21, 26 (1999).Google Scholar
[26] Loke, A.L.S., Wetzel, J.T., Townsend, P.H., Tanabe, T., Vrtis, R.N., Zussman, M.P., Kumar, D., Ryu, C., and Wong, S.S., IEEE Trans. ED 46, 2178 (1999).10.1109/16.796294Google Scholar
[27] Suo, Z.. Acta mater. 46, 3725 (1998).10.1016/S1359-6454(98)00098-6Google Scholar