Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-20T06:00:57.734Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical Vapor Deposition of Ru and RuO2 for Gate Electrode Applications

Published online by Cambridge University Press:  01 February 2011

Filippos Papadatos ,
Spyridon Skordas ,
Zubin Patel ,
Steven Consiglio  and
Eric Eisenbraun
Filippos Papadatos
Affiliation:
University at Albany Institute for Materials, Albany, New York 12203
Spyridon Skordas
Affiliation:
University at Albany Institute for Materials, Albany, New York 12203
Zubin Patel
Affiliation:
University at Albany Institute for Materials, Albany, New York 12203
Steven Consiglio
Affiliation:
University at Albany Institute for Materials, Albany, New York 12203
Eric Eisenbraun
Affiliation:
University at Albany Institute for Materials, Albany, New York 12203
Get access

Abstract

In this work, Ru and RuO2 films have been investigated for potential applications in emerging CMOS gate electrode and memory capacitor bottom electrode applications. Films were deposited on SiO2 using chemical vapor deposition (CVD) and low power plasma assisted CVD (PACVD) in a 200-mm wafer deposition cluster tool using a metal beta-diketonate precursor [Bis (2,2,6,6-tetramethyl-3,5-heptanedionato) (1,5-cyclooctadiene) ruthenium (II)]. Hydrogen and oxygen were employed as the reactive gases to deposit, respectively, Ru and RuO2, over a wafer temperature range from 320°C to 480°C. The resulting film properties were analyzed using cross-sectional scanning electron microscopy (CS-SEM), four point resistance probe, x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Both Ru and RuO2 films could be deposited with minimal carbon concentration (∼5 at. %). The purity of the films was also reflected in the as-deposited resistivity of the films, which was as low as 47 μΩ-cm, and was strongly dependent on processing conditions. In order to assess thermal stability, the films were subsequently annealed in forming gas and oxygen ambients for 60 min at 650°C. It was observed that, generally speaking, CVD RuO2 films were stable, with respect to resistivity, in oxidizing ambients, while annealing in a reducing ambient resulted in significant film densification and reduction of the film resistivities to as low as 43 μΩ-cm. Ru films demonstrated good adhesion after anneals in oxidizing, but not in reducing ambients.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B2.4
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sankar, J., Sham, T.K. and Puddephatt, R. J., J. Mater. Chem., 9, 2439–2424, (1999).Google Scholar
2. Jia, Q. X., Song, S. G., Wu, X. D., Cho, J. H., Fotlyn, S. R., Findikoglu, A. T., and, Smith, J. L., Appl. Phys. Lett. 68 (8), (1996).Google Scholar
3. Shin, W. C, Yoon, S. G., J. Electrochem. Soc., 144, (3), (1997).Google Scholar
4. Si, J., Desu, S. B., J. Mater. Res., 8, (10), (1993).Google Scholar
5. Park, S. E. et al., Thin Solid Films, 341, 52–54, (1999)Google Scholar
6. Green, M. L., Gross, M. E., Papa, L. E., Schnoes, K. J., and Brasen, D., J. Electrochem. Soc. 132, 2677, (1985).Google Scholar
7. Smith, K. C., Sun, Y. M., Mettlach, N. R., Hance, R.L, White, J.M, Thin Solid Films, 376, (73–81), (2000)Google Scholar