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Chemical Properties of Porphyrin Thin Films Deposited by ICB

Published online by Cambridge University Press:  25 February 2011

Hiroaki Usui
Affiliation:
Isao Yamada Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, 606–01 Kyoto, Japan.
Atsushi Yamada
Affiliation:
Isao Yamada Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, 606–01 Kyoto, Japan.
Kouji Murayama
Affiliation:
Isao Yamada Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, 606–01 Kyoto, Japan.
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Abstract

Porphyrin thin films were deposited by ionized cluster beam from a source material of tetraphenylporphyrin iron(III) chloride. It was found that the chlorine atoms are mostly removed from the original molecules during the film formation process, resulting in a film of tetraphenylporphyrin iron(II) complex. The film is chemically active and showed reversible reaction with O2 and CO gases at an elevated temperature. The formation of μ-oxo dimera, which hinders the chemical activity, was not observed. Electrical conductivity of the film was also measured under various atmosphere.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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