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Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

Published online by Cambridge University Press:  16 February 2011

Richard B. Jackman ,
Glenn C. Tyrrell ,
Duncan Marshall ,
Catherine L. French  and
John S. Foord
Richard B. Jackman
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, WC1E 7JE, UK
Glenn C. Tyrrell
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, WC1E 7JE, UK
Duncan Marshall
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, WC1E 7JE, UK
Catherine L. French
Affiliation:
Physical Chemistry Laboratory, University of Oxford, South Parks Rd, Oxford, OX1 3QR, UK
John S. Foord
Affiliation:
Physical Chemistry Laboratory, University of Oxford, South Parks Rd, Oxford, OX1 3QR, UK
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Abstract

This paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 215
Copyright
Copyright © Materials Research Society 1991

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References

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