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Chemical Composition and Electrical Behavior of Contacts on Highly and Moderately Silicon-Doped (100) GaAs

Published online by Cambridge University Press:  22 February 2011

P. H. Holloway ,
Y. -X. Wang ,
Y. -J. Xie  and
T. D. Bussing
P. H. Holloway
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Y. -X. Wang
Affiliation:
Visiting Scientist from the Institute of Semiconductors, Chinese Academy of Sciences Beijing, People Republic of China.
Y. -J. Xie
Affiliation:
Visiting Scientist from Changchum Institute of Physics, Chinese Academy of Science, Changchun, Peoples Republic of China.
T. D. Bussing
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
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Abstract

The effects of 1 to 5 keV Ar+ sputtering of (100) GaAs doped with >3 × 1018 cm−3 or <2 × 1017 cm−3 Si and contacted with 1000 Å of Au have been studied. Sputtering caused the contacts on highly doped GaAs to change from ohmic to rectifying, while it caused the Schottky barrier height on moderately doped GaAs to decrease. For both doping densities, barrier heights of ∼0.6 eV were measured. Inverse Laplace transform analysis of angle-resolved X-ray photoelectron spectroscopy data showed that As was preferentially sputtered, probably by a damage-assisted Gibbsian surface segregation mechanism. Modifications of the electrical contacts were explained by sputter-induced self-compensation by Si rearrangement and by damage-created shallow donors with a density of >2 × 1017 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 47: Symposium C – Thin Films: The Relationship of Structure to Properties , 1985 , 235
Copyright
Copyright © Materials Research Society 1985

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References

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